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Glenn Research Center

Technical Publications

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Many of the formal technical publications of the NASA Glenn Smart Sensors and Electronics Systems Branch are listed in the below table. These technical publications are posted on this site in order to ensure timely public dissemination of NASA technical work. Works listed below that are subject to US copyright are denoted by the © copyright symbol in the Reference column. All persons accessing this information are expected to adhere to the terms and constraints invoked by each work’s copyright. Copyrighted works may not be reposted elsewhere without the explicit permission of the copyright holder. Works authored solely by US Government Employees performing official duties are not protected by US copyright. However, co-authored work with at least one non-US Government co-author is subject to copyright. Copyright and all rights therein are retained by authors or by other copyright holders. Please note that due to recent alteration of NASA Glenn Research and Engineering Directorate information posting policy, some publications listed in the below table are no longer available for direct viewing by clicking on the publication’s title.

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Publication TitleTypeReferenceYearTopic Area(s)Author(s)
Demonstration of 4H-SiC JFET Digital ICs Across 1000 °C Temperature Range Without Change to Input VoltagesConference PaperMaterials Science Forum, vol. 963, pp. 813-8172019Integrated Circuits, High TemperatureNeudeck, Spry, Krasowski, Prokop, Chen
Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric ConditionsJournal ArticleIEEE Journal of the Electron Devices Society, vol. 7, pp. 100-1102018Integrated Circuits, High TemperatureNeudeck, Chen, Meredith, Lukco, Spry, Nakley, Hunter
Yearlong 500 C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated CircuitsJournal ArticleJournal of Microelectronics and Electronic Packaging, vol. 15, no. 4, pp. 163-170 ©IMAPS2018Integrated Circuits, High TemperatureNeudeck, Spry, Krasowski, Prokop, Beheim, Chen, Chang
Chemical Analysis of Materials Exposed to Venus Temperature and Surface AtmosphereJournal ArticleEarth and Space Science, vol. 5, pp. 270-2842018High Temperature, Device ProcessingLukco, Spry, Harvey, Costa, Okojie, Avishai, Nakley, Neudeck, Hunter
Sixty Earth-days Test of Prototype Pt/HTCC Alumina Package in Simulated Venus EnvironmentConference PaperProceedings 2018 IMAPS High Temperature Electronics Conference, pp. 15-21 ©IMAPS2018Packaging, High TemperatureChen, Neudeck, Meredith, Lukco, Spry, Nakley, Phillips, Beheim, Hunter
Yearlong 500 C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated CircuitsConference PaperProceedings 2018 IMAPS High Temperature Electronics Conference, pp. 71-78 ©IMAPS2018Integrated Circuits, High TemperatureNeudeck, Spry, Krasowski, Prokop, Beheim, Chen, Chang
Prolonged 500 C Operation of 100+ Transistor Silicon Carbide Integrated CircuitsConference PaperMaterials Science Forum, vol. 924, pp. 949-952 ©Trans Tech Publications2018Integrated Circuits, High TemperatureSpry, Neudeck, Lukco, Chen, Krasowski, Prokop, Chang, Beheim
Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit ResistorsConference PaperMaterials Science Forum, vol. 924, pp. 962-966 ©Trans Tech Publications2018Integrated Circuits, High TemperatureNeudeck
A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky DiodesConference Paper2018 IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet), pp. 23-262018Integrated Circuits, High Temperature, RFJordan, Ponchak, Neudeck, Spry
Demonstration of 4H-SiC Digital Integrated Circuits Above 800 CJournal ArticleIEEE Electron Device Letters, vol. 38, no. 8, pp. 1082-10852017Integrated Circuits, High TemperatureNeudeck, Spry, Chen, Prokop, Krasowski
Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 C to 700 CConference PaperMaterials Science Forum, vol. 897, pp. 567-570 ©Trans Tech Publications2017Integrated Circuits, High TemperatureNeudeck, Spry, Chen, Lukco, Chang, Beheim
Prolonged Silicon Carbide Integrated Circuit Operation in Venus Surface Atmospheric ConditionsJournal ArticleAIP Advances, vol. 6, no. 12, p. 1251192016Integrated Circuits, High TemperatureNeudeck, Meredith, Chen, Spry, Nakley, Hunter
Simultaneous Ohmic Contacts to p- and n-type 4H-SiC by Phase Segregation Annealing of Co-sputtered Pt-TiJournal ArticleJournal of Applied Physics, vol. 120, p. 215301 ©American Institute of Physics2016Device Processing, Contacts, High TemperatureOkojie, Lukco
First-Order SPICE Modeling of Extreme-Temperature 4H-SiC JFET Integrated CircuitsConference PaperProceedings 2016 IMAPS High Temperature Electronics Conference, pp. 263-271 ©IMAPS2016Integrated Circuits, High TemperatureNeudeck, Spry, Chen
Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal InterconnectConference PaperMaterials Science Forum, vol. 828, pp. 1112-1116 ©Trans Tech Publications2016Integrated Circuits, High Temperature, Electronic Devices, Device ProcessingSpry, Neudeck, Chen, Evans, Lukco, Chang, Beheim
Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 CConference PaperMaterials Science Forum, vol. 828, pp. 903-907 ©Trans Tech Publications2016Integrated Circuits, High Temperature, Electronic Devices, Device ProcessingNeudeck, Spry, Chen
Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated CircuitsConference PaperProceedings 2016 IMAPS High Temperature Electronics Conference, pp. 249-256 ©IMAPS2016Integrated Circuits, High Temperature, Electronic Devices, Device ProcessingSpry, Neudeck, Chen, Lukco, Chang, Beheim, Krasowski, Prokop
Processing and Prolonged 500 C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal InterconnectConference PaperMaterials Science Forum, vol. 828, pp. 908-912 ©Trans Tech Publications2016Integrated Circuits, High Temperature, Electronic Devices, Device Processing, PackagingSpry, Neudeck, Chen, Lukco, Chang, Beheim, Krasowski, Prokop
Prolonged 500 C Demonstration of 4H-SiC JFET ICs With Two-Level InterconnectJournal ArticleIEEE Electron Device Letters, vol. 37, no.5, pp. 625-628 ©IEEE2016Integrated Circuits, High Temperature, Electronic Devices, Device Processing, PackagingSpry, Neudeck, Chen, Lukco, Chang, Beheim
Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 CConference PaperProceedings of SPIE, vol. 9836, 98360N, ©SPIE2016Integrated Circuits, High Temperature, Electronic Devices, Device Processing, PackagingSpry, Neudeck, Chen, Lukco, Chang, Beheim
Electrical Performance of a High Temperature 32-I/O HTCC Alumina PackageConference PaperProceedings 2016 IMAPS High Temperature Electronics Conference, pp. 66-72 ©IMAPS2016Packaging, Integrated Circuits, High TemperatureChen, Neudeck, Spry, Beheim, Hunter
Characterization of tungsten–nickel simultaneous Ohmic contacts to p- and n-type 4H-SiCJournal ArticleSemiconductor Science and Technology, nol. 30, no. 10, p. 105019 © IOP Science2015High Temperature, Device ProcessingKragh-Buetow, Okojie, Lukco, and Mohney
4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity RecoveryJournal ArticleIEEE Electron Device Letters, vol. 36, no. 2, p. 174-176 ©IEEE2015High Temperature, Sensors, MEMSOkojie, Lukco, Nguyen, Savrun
Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC DesignConference PaperMaterials Science Forum, vol. 821-823, pp. 781-784 ©Trans Tech Publications2015Integrated Circuits, Device Processing, Electronic DevicesNeudeck, Chen, Spry, Beheim, Chang
4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 KConference PaperElectrochemical Society Transactions, vol. 69, no. 11, pp. 113-121 ©Electrochemical Society2015Integrated Circuits, High Temperature, Electronic Devices, Device Processing, PackagingSpry, Neudeck, Chen, Chang, Lukco, Beheim
Demonstration of SiC Pressure Sensors at 750 CConference PaperProceedings 2014 IMAPS International High Temperature Electronics Conference, pp. 28-32 © IMAPS2014Sensors, MEMS, Packaging, High TemperatureOkojie, Lukco, Nguyen, Savrun
High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure SensorsConference PaperProceedings 2014 IMAPS International High Temperature Electronics Conference, pp. 47-52 © IMAPS2014Sensors, MEMS, Packaging, High TemperatureOkojie, Meredith, Chang, Savrun
SiC growth by Solvent-Laser Heated Floating ZoneConference PaperMaterials Science Forum, vol. 717-720, pp. 49-52 ©Trans Tech Publications2012Crystal Growth, Homoepitaxy, Crystal DefectsWoodworth, Neudeck, Sayir, Spry, Trunek, Powell
Lateral Growth Expansion of 4H/6H-SiC m-plane Pseudo Fiber Crystals by Hot Wall CVD EpitaxyConference PaperMaterials Science Forum, vol. 717-720, pp. 33-36 ©Trans Tech Publications2012Crystal Growth, Homoepitaxy, Crystal DefectsTrunek, Neudeck, Woodworth, Powell, Spry, Raghothamachar, Dudley
A New Method to Grow SiC: Solvent-Laser Heated Floating ZoneConference Paper6th International Symposium on Advanced Science and Technology of Silicon Materials2012Crystal Growth, Homoepitaxy, Crystal DefectsWoodworth, Neudeck, Sayir
Development of an Extreme High Temperature n-type Ohmic Contact to Silicon CarbideConference PaperMaterials Science Forum, vol. 717-720, pp. 841-844 ©Trans Tech Publications2012Device Processing, Contacts, High TemperatureEvans, Okojie, Lukco
High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring OscillatorConference PaperMaterials Science Forum, vol. 717-720, pp. 1215-1218 ©Trans Tech Publications2012Sensors, MEMS, Electronic Circuits, Packaging, High TemperatureMeredith, Neudeck, Ponchak, Beheim, Scardeletti, Jordan, Chen, Spry, Krasowski, Hunter
Supressing Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure SensorsConference PaperProceedings 2012 IMAPS International High Temperature Electronics Conference pp. 99-103 ©IMAPS2012Sensors, MEMS, Packaging, Electronic Devices, High TemperatureOkojie, Lukco, Nguyen, Savrun
Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space StationConference PaperMaterials Science Forum, vol. 679-680, pp. 579-5822011Electronic DevicesNeudeck, Prokop, Greer, Chen, Krasowski
Assessment of Durable SiC JFET Technology for +600 C to -125 C Integrated Circuit OperationConference PaperElectrochemical Society Transactions, vol. 41, no. 8, pp. 163-176 ©Electrochemical Society2011Integrated Circuits, High TemperatureNeudeck, Krasowski, Prokop
Improved Reliability of SiC Pressure Sensors for Long Term High Temperature ApplicationsConference Paper16th International Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS 2011), pp. 2875-2878 ©IEEE2011Sensors, MEMS, Packaging, High TemperatureOkojie, Nguyen, Savrun, Lukco
Zero offset drift suppression in SiC pressure sensors at 600 CConference PaperProceedings IEEE Sensors 2010 ©IEEE2010Sensors, MEMS, Packaging, High TemperatureOkojie, Blaha, Lukco, Nguyen, Savrun
A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 CJournal ArticleIEEE Electron Device Letters, vol. 31, pp. 791-793 ©IEEE2010Device Processing, Contacts, High TemperatureOkojie, Evans, Lukco, Morris
Characterization of 6H-SiC JFET Integrated Circuits Over A Broad Temperature Range from -150 C to +500 CConference PaperMaterials Science Forum, vol. 645-648, pp. 1135-1138 ©Trans Tech Publications2010Integrated Circuits, JFET, High TemperatureNeudeck, Chen, Krasowski, Prokop
HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC SurfacesConference PaperMaterials Science Forum, vol. 615-617 pp. 593-596 @Trans Tech Publications2009Crystal Growth, Crystal DefectsTrunek, Powell, Neudeck, Mrdenovich
Observations of Screw Dislocation Driven Growth and Faceting During CVD Homoepitaxy on 4H-SiC On-Axis Mesa ArraysConference Presentation13th International Conference on Defects - Recognition, Imaging, and Physics in Semiconductors (DRIP-XIII)2009Crystal Growth, Crystal Defects, AFMNeudeck, Trunek, Powell, Picard, Twigg, Mrdenovich
Prolonged 500 C Operation of 6H-SiC JFET Integrated CircuitryConference PaperMaterials Science Forum, vol. 615-617, pp. 929-932 ©Trans Tech Publications2009Electronic Circuits, JFET, High TemperatureNeudeck, Spry, Chen, Beheim, Okojie, Chang, Meredith, Ferrier, Evans, Krasowski, Prokop
Extreme Temperature 6H-SiC JFET Integrated Circuit TechnologyJournal ArticlePhysica Status Solidi A, vol. 206, pp. 2329-2345 ©Wiley-VCH2009Electronic Circuits, JFET, High TemperatureNeudeck, Garverick, Spry, Chen, Beheim, Krasowski, Mehregany
Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 C Operation in Air AmbientConference PaperMaterials Science Forum, vol. 600-603, pp. 1079-1082 ©Trans Tech Publications2008Electronic Circuits, JFET, High TemperatureSpry, Neudeck, Chen, Beheim, Okojie, Chang, Meredith, Ferrier, Evans
Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 C Journal ArticleIEEE Electron Device Letters, vol. 29, pp. 456-459 ©IEEE2008Electronic Circuits, JFET, High TemperatureNeudeck, Spry, Chen, Beheim, Okojie, Chang, Meredith, Ferrier, Evans, Krasowski, Prokop
Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 CConference PaperMaterials Research Society Symposium Proceedings, vol. 1069, pp. 209-214 ©Materials Research Society2008Electronic Circuits, JFET, High TemperatureNeudeck, Spry, Chen, Chang, Beheim, Okojie, Evans, Meredith, Ferrier, Krasowski, Prokop
6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 CConference PaperIMAPS International High Temperature Electronics Conference, pp. 95-102 ©IMAPS2008Electronic Circuits, JFET, High TemperatureNeudeck, Spry, Chen, Chang, Beheim, Okojie, Evans, Meredith, Ferrier, Krasowski, Prokop
Current-Voltage Testing of Candidate Dielectric Materials for 500 C SiC Integrated CircuitsConference PaperIMAPS International High Temperature Electronics Conference, pp. 84-90 ©IMAPS2008Electronic Devices, Device ProcessingChang, Neudeck, Beheim, Spry
Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed CantileversConference PaperMaterials Science Forum, vol. 600-603, pp. 1199-1202 ©Trans Tech Publications2008Sensors, MEMS, DiodesNeudeck, Spry, Trunek, Evans, Chen, Hunter, Androjna
Growth and Characterization of 3C-SiC and 2H-AlN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa SubstratesJournal ArticleJournal of Physics D: Applied Physics, vol. 40, pp. 6139-6149 ©IOP Publishing2007Crystal Growth, Heteroepitaxy, Crystal DefectsNeudeck, Du, Skowronski, Spry, Trunek
Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial CantileversConference PaperMaterials Science Forum, vol. 556-557, pp. 117-120 ©Trans Tech Publications2007Crystal Growth, HomoepitaxyTrunek, Neudeck, Spry
SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 CConference PaperMaterials Science Forum, vol. 556-557, pp. 831-834 ©Trans Tech Publications2007Electronic Devices, MESFET, High Temperature, PackagingNeudeck, Spry, Chen, Okojie, Beheim, Meredith, Ferrier
SiC Technology (2nd Edition)Book ChapterThe VLSI Handbook, Second Edition, CRC Press2007OverviewNeudeck
Process-Induced Deformations and Stacking Faults in 4H-SiCConference PaperMaterials Research Society Symposium Proceedings, vol. 911, pp. 145-150 ©Materials Research Society2006Crystal Defects, Device ProcessingOkojie, Huang, Dudley, Zhang, P. Pirouz
Experimental Observations of Extended Growth of 4H-SiC Webbed CantileversConference PaperMaterials Science Forum, vol. 527-529, pp. 247-250 ©Trans Tech Publications2006Crystal Growth, HomoepitaxyTrunek, Neudeck, Spry
Recent Results From Epitaxial Growth on Step Free 4H-SiC MesasConference PaperMaterials Research Society Symposium Proceedings, vol. 911, pp. 85-94 ©Materials Research Society2006Crystal Growth, Homoepitaxy, Heteroepitaxy, AFM, Crystal DefectsNeudeck, Trunek, Spry, Powell, Du, Skowronski, Bassim, Mastro, Twigg, Holm, Henry, Eddy
CVD Growth of 3C-SiC on 4H/6H MesasJournal ArticleChemical Vapor Deposition, vol. 12, pp. 531-540 ©Wiley-VCH2006Crystal Growth, Homoepitaxy, Heteroepitaxy, AFM, Crystal DefectsNeudeck, Trunek, Spry, Powell, Du, Skowronski, Huang, Dudley
Deep Reactive Ion Etching (DRIE) of High Aspect Ration SiC Microstructures Using a Time-Multiplexed Etch-Passivate ProcessConference PaperMaterials Science Forum, vol. 527-529, pp. 1115-11182006Device Processing, Dry Etching, MEMSEvans, Beheim
Control of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiCConference PaperMaterials Research Society Symposium Proceedings, vol. 911, pp. 329-3342006Device Processing, Dry Etching, MEMSBeheim, Evans
Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiCConference PaperMaterials Science Forum, vol. 527-529, pp. 1335-1338 ©Trans Tech Publications2006Electronic Devices, Diodes, Heteroepitaxy, Crystal DefectsNeudeck, Spry, Trunek
Demonstration of 500 C AC Amplifier Based on SiC MESFET and Ceramic PackagingConference PaperIMAPS International High Temperature Electronics Conference, pp. 240-246 ©IMAPS2006Electronic Devices, MESFET, High Temperature, PackagingChen, Spry, Neudeck
Performance of MEMS-DCA SiC Pressure Transducers under Various Dynamic ConditionsConference PaperIMAPS International High Temperature Electronics Conference, pp. 70-75 ©IMAPS2006Sensors, MEMS, PackagingOkojie, Page, Wolff
Performance of MEMS-DCA SiC Pressure Transducers under Various Dynamic ConditionsConference PaperIMAPS International High Temperature Electronics Conference, pp. 82-86 ©IMAPS2006Sensors, MEMS, PackagingOkojie, Nguyen, Nguyen, Savrun, Lukco, Buehler, McCue, Knudsen
Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC MesasConference PaperMaterials Science Forum, vol. 483-485, pp. 753-756 ©Trans Tech Publications2005Crystal Growth, AFMPowell, Neudeck, Trunek, Abel
Inelastic Stress Relaxation in Single Crystal SiC SubstratesConference PaperMaterials Science Forum, vol. 457-460, pp. 375-3782004Crystal DefectsOkojie
Residual Stresses and Stacking Faults in N-Type 4H-SiC EpilayersConference PaperMaterials Science Forum, vol. 457-460, pp. 529-532 ©Trans Tech Publications2004Crystal DefectsOkojie, Zhang, Pirouz
Thermoplastic Deformation and Residual Stress Topography of 4H-SiC WafersConference PaperMaterials Research Society Symposium Proceedings, vol. 815, pp. 133-138 ©Materials Research Society2004Crystal DefectsOkojie, Zhang
Atomic Force Microscope Observation of Growth and Defects on As-Grown (111) 3C-SiC Mesa SurfacesConference PaperMaterials Research Society Symposium Proceedings, vol. 815, pp. 59-64 ©Materials Research Society2004Crystal Growth, Crystal Defects, HeteroepitaxyNeudeck, Trunek, Powell
Comparative Growth Behavior of 3C-SiC Mesa Heterofilms With and Without Extended DefectsConference PaperMaterials Science Forum, vol. 457-460, pp. 261-264 ©Trans Tech Publications2004Crystal Growth, Heteroepitaxy, Crystal DefectsTrunek, Neudeck, Spry
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and CantileversConference PaperMaterials Science Forum, vol. 457-460, pp. 169-174 ©Trans Tech Publications2004Crystal Growth, Homoepitaxy, Heteroepitaxy, AFM, Crystal DefectsNeudeck, Powell, Trunek, Spry
High Breakdown Field P-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC MesasConference PaperMaterials Science Forum, vol. 457-460, pp. 1061-1064 ©Trans Tech Publications2004Electronic Devices, Diodes, HeteroepitaxySpry, Trunek, Neudeck
Electrical Operation of 6H-SiC MESFET at 500 C for 500 Hours in Air AmbientConference PaperIMAPS International High Temperature Electronics Conference ©IMAPS2004Electronic Devices,High Temperature, MESFET, PackagingSpry, Neudeck, Okojie, Chen, Beheim, Meredith, Mueller, Ferrier
Development of SiC-Based Gas Sensors for Aerospace ApplicationsConference PaperMaterials Research Society Symposium Proceedings, vol. 815, pp. 287-297 ©Materials Research Society2004Sensors, MEMSHunter, Neudeck, Xu, Lucko, Trunek, Artale, Lampard, Androjna, Makel, Ward, Liu
Accelerated Stress Testing of SiC MEMS-DCA Pressure TransducersConference PaperIMAPS International High Temperature Electronics Conference ©IMAPS2004Sensors, MEMS, PackagingSavrun, Nguyen, Okojie, Blaha
Reliability Evaluation of Direct Chip Attached Silicon Carbide Pressure TransducersConference Paper3rd International Conference on Sensors2004Sensors, MEMS, PackagingOkojie, Savrun, Nguyen, Nguyen, Blaha
X-ray Diffraction Measurement of Doping Induced Lattice Mismatch in N-Type 4H-SiC Epilayers Grown on P-Type SubstratesJournal ArticleApplied Physics Letters, vol. 83, no. 10, pp. 1971-1973 ©American Institute of Physics2003Crystal DefectsOkojie, Holzheu, Huang, Michael Dudley
Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC MesasBook ChapterSilicon Carbide: Recent Major Advances, Springer-Verlag2003Crystal Growth, Crystal Defects, Homoepitaxy, HeteroepitaxyNeudeck, Powell
Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web GrowthConference PaperMaterials Research Society Symposium Proceedings, vol. 742, pp. K5.2.1-K5.2.6 ©Materials Research Society2003Crystal Growth, Homoepitaxy, AFM, Crystal DefectsNeudeck, Spry, Trunek, Powell, Beheim
Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface HeteroepitaxyConference PaperMaterials Science Forum, vol. 433-436, pp. 213-216 ©Trans Tech Publications2003Crystal Growth, Homoepitaxy, Heteroepitaxy, AFM, Crystal DefectsNeudeck, Powell, Spry, Trunek, Huang, Vetter, Dudley, Skowronski, Liu
Intermodulation Distortion Performance of Silicon Carbide Schottky Barrier RF Mixer DiodesJournal ArticleIEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 2, pp. 669-6722003Electronic Devices, RFSimons, Neudeck
A Single Crystal SiC Plug-and-Play High Temperature Drag Force TransducerConference PaperThe 12th International Conference on Solid State Sensors, Actuators and Microsystems, pp. 400-403 (IEEE # 03TH8664C) ©IEEE2003Sensors, MEMS, Packaging, High TemperatureOkojie, Fralick, Saad, Blaha, Adamczyk, Feiereisen
4H- to 3C-SiC Polytypic Transformation During OxidationConference PaperMaterials Science Forum, vol. 389-393,pp. 451-454 ©Trans Tech Publications2002Crystal Defects, Device Processing, OxidationOkojie, Brillson, Tumakha, Jenseen, Xhang, Pirouz
Surface Morphology and Chemistry of 4H- and 6H-SiC After Cyclic OxidationConference PaperMaterials Science Forum, vol. 389-393,pp. 1101-1104 ©Trans Tech Publications2002Crystal Defects, Device Processing, OxidationOkojie, Lukco, Keys
Homoepitaxial "Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface HeteroepitaxyConference PaperMaterials Science Forum, vol. 389-393,pp. 311-314 ©Trans Tech Publications2002Crystal Growth, Heteroepitaxy, Crystal DefectsNeudeck, Powell, A. Trunek, Huang, Dudley
Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web Growth of Thin SiC CantileversJournal ArticleJournal of Applied Physics, vol. 92, no. 5, pp. 2391-2400 ©American Institute of Physics2002Crystal Growth, Homoepitaxy, AFMNeudeck, Powell, Beheim, Benavage, Abel, Trunek, Spry, Dudley, Vetter
Homoepitaxial "Web Growth" of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free SurfacesConference PaperMaterials Science Forum, vol. 389-393, pp. 251-254 ©Trans Tech Publications2002Crystal Growth, Homoepitaxy, AFM, Crystal DefectsNeudeck, Powell, Trunek, Spry, Beheim, Benavage, Abel, Vetter, Dudley
Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiCJournal ArticleJournal of Vacuum Science & Technology B, vol. 20, no. 2, pp. 554-560 ©American Vacuum Society2002Device Processing, Contacts, Crystal DefectsTumakha, Brillson, Jessen, Okojie, Lukco, Zhang, Pirouz
Reliability Assessment of Ti/TaSi2/Pt Ohmic Contacts on SiC After 1000 h at 600 CJournal ArticleJournal of Applied Physics, vol. 91, no. 10, pp. 6553-9559 ©American Institute of Physics2002Device Processing, Contacts, High TemperatureOkojie, Lukco, Chen, Spry
High-Temperature Electronics - A Role for Wide Bandgap Semiconductors?Journal ArticleProceedings of the IEEE, vol. 90, no. 6, pp. 1065-1076 ©IEEE2002OverviewNeudeck, Okojie, Chen
Design Considerations for Bulk Micromachined 6H-SiC High-g Piezoresistive AccelerometersConference PaperTechnical Digest of the 15th IEEE International Conference on MEMS, p. 618-622 (IEEE # 02CH37266) ©IEEE2002Sensors, MEMSOkojie, Atwell, Kornegay, Roberson, Beliveau
Observation of Oxidation-Induced 4H-SiC-3C-SiC Polytypic TransformationJournal ArticleApplied Physics Letters, vol. 79, no. 19, pp. 3056-3058 ©American Institute of Physics2001Crystal DefectsOkojie, Brillson, Tumakha, Jenseen, Xhang, Pirouz
Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiCConference PaperMaterials Research Society Symposia Proceedings, vol. 640 ©Materials Research Society2001Device Processing, Contacts, High TemperatureOkojie, Lukco, Chen, Spry, C. Salupo
Silicon Carbide Electronic Devices Book ChapterEncyclopedia of Materials: Science and Technology, Elsevier Science, vol. 9, pp. 8508-85192001OverviewNeudeck
Characteristics of Hermetic 6H-SiC Pressure Sensor at 600 CConference PaperAIAA Space 2001 Conference and Exposition, AIAA Paper No. 2001-46522001Sensors, MEMS. Packaging, High TemperatureOkojie, Beheim, Saad, Savrun
Growth of Step-Free Surfaces on Device-Size (0001)SiC MesasJournal ArticleApplied Physics Letters, vol. 77, no. 10, pp. 1449-1451 ©American Institute of Physics2000Crystal Growth, Homoepitaxy, AFMPowell, Neudeck, Trunek, Beheim,Matus, Hoffmann, Keys
Stable Ti/TaSi2/Pt Ohmic Contacts on N-Type 6H-SiC Epilayer at 600C in AirConference PaperMaterials Research Society Symposia Proceedings, vol. 622 ©Materials Research Society2000Device Processing, Contacts, High TemperatureOkojie, Spry, Krotine, Salupo, Wheeler
Deep RIE Process for Silicon Carbide Power Electronics and MEMSConference PaperMaterials Research Society Symposia Proceedings, vol. 622 ©Materials Research Society2000Device Processing, Etching, MEMSBeheim, Salupo
600 C Logic Gates Using Silicon Carbide JFET'sConference PaperGovernment Microcircuit Applications Conference Technical Digest, pp. 421-4242000Electronic Circuits, JFET, High TemperatureNeudeck, Beheim, Salupo
Electrical Impact of SiC Structural Crystal Defects on High Electric Field DevicesConference PaperMaterials Science Forum, vol. 338-342, pp. 469-4722000Electronic Devices, Diodes, Crystal DefectsNeudeck
Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky DiodesConference PaperMaterials Science Forum, vol. 338-342, pp. pp. 489-492 ©Trans Tech Publications2000Electronic Devices, Diodes, Crystal DefectsSchnabel, Tabib-Azar, Neudeck, Bailey, Su, Dudley, Raffaelle
Investigations of Non-Micropipe X-ray Imaged Crystal Defects in SiC DevicesConference PaperMaterials Research Society Symposia Proceedings, vol. 622 ©Materials Research Society2000Electronic Devices, Diodes, Crystal Defects, AFMNeudeck, Kuczmarski, Dudley, Vetter, Su, Keys, Trunek
SiC TechnologyBook ChapterThe VLSI Handbook, CRC Press and IEEE Press, 2000, pp. 6.1-6.242000OverviewNeudeck
Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p+n Junction Diodes - Part 1: DC PropertiesJournal ArticleIEEE Transactions on Electron Devices, vol. 46, no. 3, pp. 478-484 ©IEEE1999Electronic Devices, Diodes, Crystal DefectsNeudeck, Huang, Dudley
Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p+n Junction Diodes - Part 2: Dynamic Pulse-Breakdown PropertiesJournal ArticleIEEE Transactions on Electron Devices, vol. 46, no. 3, pp. 485-4921999Electronic Devices, Diodes, Crystal DefectsNeudeck, Fazi
Gaseous Etching for the Characterization of Structural Defects in Silicon Carbide Single CrystalsConference PaperMaterials Science Forum, vol. 264-268, pp. 421-424 ©Trans Tech Publications1998Crystal Growth, Crystal Defects, AFMPowell, Larkin, Trunek
Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching PropertiesConference PaperMaterials Science Forum, vol. 264-268, pp. 1037-10401998Electronic Devices, DiodesNeudeck, Fazi
Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient AnalysisJournal ArticleJournal of Electronic Materials, vol. 27, no. 4, pp. 317-3231998Electronic Devices, DiodesNeudeck
Breakdown Degradation Associated With Elementary Screw Dislocations in 4H-SiC P+N Junction RectifiersConference PaperMaterials Research Society Symposia Proceedings, vol. 483, pp. 285-294 ©Materials Research Society1998Electronic Devices, Diodes, Crystal DefectsNeudeck, Huang, Dudley
Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology ImplicationsConference PaperMaterials Research Society Symposia Proceedings, vol. 512, pp. 107-112 ©Materials Research Society1998Electronic Devices, Diodes, Crystal DefectsNeudeck, Huang, Dudley, Fazi,
Breakdown Degradation Associated With Elementary Screw Dislocations in 4H-SiC P+N Junction RectifiersJournal ArticleSolid-State Electronics, vol. 42, no. 12, pp. 2157-2164 ©Elsevier Science Ltd.1998Electronic Devices, Diodes, Crystal DefectsNeudeck, Huang, Dudley
Process-Induced Morphological Defects in Epitaxial CVD Silicon CarbideJournal ArticlePhysica Status Solid B, vol. 202, no. 1, pp. 529-5481997Crystal Growth, Crystal Defects, AFMPowell, Larkin
SiC Dopant Incorporation Control Using Site-Competition CVDJournal ArticlePhysica Status Solid B, vol. 202, no. 1, pp. 305-3201997Crystal Growth, DopingLarkin
Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction RectifiersJournal ArticleIEEE Electron Device Lett., vol. 18, no. 3, pp. 96-981997Electronic Devices, DiodesNeudeck, Fazi
Perimeter Governed Minority Carrier Lifetimes in 4H-SiC p+n Diodes Measured by Reverse Recovery Switching Transient AnalysisConference Presentation39th Annual IEEE/TMS Electronic Materials Conference1997Electronic Devices, DiodesNeudeck
Wide Dynamic Range RF Mixers Using Wide-Bandgap SemiconductorsConference PaperIEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 49-511997Electronic Devices, Diodes, RFFazi, Neudeck
Site-Competition Epitaxy for N-Type and P-Type Dopant Control in CVD SiC EpilayersConference PaperInstitute of Physics Conference Series, no. 142, pp. 23-281996Crystal Growth, DopingLarkin
Dopant Incorporation Efficiency in CVD Silicon Carbide EpilayersConference PaperMaterials Research Society Symposia Proceedings, vol. 410, pp. 337-3441996Crystal Growth, DopingLarkin
Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001)SiC SubstratesConference PaperInstitute of Physics Conference Series, no. 142, pp. 77-801996Crystal Growth, Homoepitaxy, AFMPowell, Larkin, Abel, Zhou, Pirouz
Sources of Morphological Defects in SiC EpilayersConference PaperTransactions Third International High Temperature Electronics Conference,pp. II-3 - II - 81996Crystal Growth, Homoepitaxy, Crystal DefectsPowell, Larkin, Zhou, Pirouz
Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction DiodesConference PaperTransactions Third International High Temperature Electronics Conference, pp. XVI-15 - XVI-201996Electronic Devices, DiodesNeudeck, Fazi, Parsons
Highly Reliable Positive Temperature Coefficient of Breakdown in 4H-SiC PN Junction RectifiersConference Abstract54th Annual IEEE Device Research Conference1996Electronic Devices, DiodesNeudeck, Larkin, Fazi
Progress Towards High Temperature, High Power SiC DevicesConference PaperInstitute of Physics Conference Series, no. 141, pp. 1-61995OverviewNeudeck
Performance Limiting Micropipe Defects in Silicon Carbide WafersJournal ArticleIEEE Electron Device Letters, vol. 15, no. 2, pp. 63-651994Crystal Defects, Electronic Devices, DiodesNeudeck, Powell
Investigation of Defects in Epitaxial 3C-SiC, 4H-SiC and 6H-SiC Films Grown on SiC SubstratesConference PaperInstitute of Physics Conference Series, no. 137, pp. 161-1641994Crystal Growth, Crystal DefectsPowell, Larkin, Neudeck, Yang, Pirouz
Site-Competition Epitaxy for Controlled Doping of CVD Silicon CarbideConference PaperInstitute of Physics Conference Series, no. 137, pp. 51-541994Crystal Growth, DopingLarkin, Neudeck, Powell, Matus
Measurement of n-type Dry Thermally Oxidized 6H-SiC Metal-oxide Semiconductor Diodes by Quasistatic and High-Frequency Capacitance Versus Voltage and Capacitance Transient TechniquesJournal ArticleJournal of Applied Physics, vol. 75, no. 12, pp. 7949-7953 ©American Institute of Physics1994Electronic Devices, Device ProcessingNeudeck, Kang, Petit, Tabib-Azar
2000 V 6H-SiC PN Junction DiodesConference PaperInstitute of Physics Conference Series, no. 137, pp. 475-4791994Electronic Devices, DiodesNeudeck, Larkin, Powell, Matus, Salupo
2000 V 6H‐SiC p‐n Junction Diodes Grown by Chemical Vapor DepositionJournal ArticleApplied Physics Letters, no. 137, vol. 64, no. 11, pp. 1386-1388 ©American Institute of Physics1994Electronic Devices, DiodesNeudeck, Larkin, Powell, Matus, Salupo
Electrical Properties of Epitaxial 3C- and 6H-SiC p-n Junction Diodes Produced Side-by-Side on 6H-SiC WafersJournal ArticleIEEE Transactions on Electron Devices, vol. 41, no. 5, pp. 826-835 ©IEEE1994Electronic Devices, Diodes, HeteroepitaxyNeudeck, Larkin, Starr, Powell, Salupo, Matus
Silicon Carbide Buried-Gate Junction Field Effect Transistors for High-Temperature Power Electronic ApplicationsConference PaperTransactions Second International High Temperature Electronic Conference, pp. X-23 - X-281994Electronic Devices, JFET, High TemperatureNeudeck, Petit, Salupo
Greatly Improved 3C-SiC p-n Junction Diodes Grown by Chemical Vapor DepositionJournal ArticleIEEE Electron Device Letters, vol. 14, no.3, pp. 136-138 ©IEEE1993Electronic Devices, DiodesNeudeck, Larkin, Starr, Powell, Salupo, Matus
High Voltage 6H-SiC Rectifiers: Prospects and ProgressConference AbstractIEEE 51st Annual Device Research Conference1993Electronic Devices, Diodes, Crystal DefectsNeudeck, Larkin, Powell, Matus
Electrical Characterization of 3C- and 6H-SiC PN Junction Diodes Grown by CVD on Low-Tilt-Angle 6H-SiC WafersConference PresentationWorkshop on SiC Materials and Devices, Charlottesville, Virginia USA1992Electronic Devices, DiodesNeudeck, Larkin, Starr, Powell, Salupo, Matus
Four-Fold Improvement of 3C-SiC PN Junction Diode Blocking Voltage Obtained Through Improved CVD Epitaxy on Low-Tilt-Angle 6H-SiC WafersConference AbstractIEEE International Electron Devices Meeting Technical Diggest, pp. 1003-1005 ©IEEE1992Electronic Devices, DiodesNeudeck, Larkin, Starr, Powell, Salupo, Matus
Growth of Improved Qualtiy 3C-SiC Films on 6H-SiC SubstratesJournal ArticleApplied Physics Letters, vol. 56, no. 14, pp. 1353-1355 ©American Institute of Physics1990Crystal Growth, HeteroepitaxyPowell, Larkin, Matus, Choyke, Bradshaw, Henderson, Yoganathan, Yang, Pirouz
Growth of High Quality 6H-SiC Epitaxial Films on Vicinal (0001) 6H-SiC WafersJournal ArticleApplied Physics Letters, vol. 56, no. 15, pp. 1442-1444 ©American Institute of Physics1990Crystal Growth, HomoepitaxyPowell, Larkin, Matus, Choyke, Bradshaw, Henderson, Yoganathan, Yang, Pirouz